FEATURES Hermetically sealed leaded glass SOD27 (DO-35) package High switching speed: max. 4 ns General application Continuous reverse voltage: max. 75 V Repetitive peak reverse voltage: max. 100 V Repetitive peak forward current: max. 450 mA.
DESCRIPTION The 1N4148 and 1N4448 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; 25 �C prior to surge; see ms t=1s Ptot Tstg Tj Note 1. Device mounted an FR4 printed circuit-board; lead length 10 mm. total power dissipation storage temperature junction temperature Tamb = 25 �C; note mW �C see Fig.2; note 1 CONDITIONS MIN. MAX. V mA UNIT
ELECTRICAL CHARACTERISTICS 25 �C unless otherwise specified. SYMBOL IR Cd trr reverse current reverse current; 1N4448 diode capacitance reverse recovery time PARAMETER forward voltage see 20 V; see = 150 �C; see = 100 �C; see = 1 MHz; = 0; see Fig.6 CONDITIONS
when switched from = 60 mA; 100 ; measured = 1 mA; see Fig.7 when switched from = 50 mA; = 20 ns; see Fig.8 -
THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on a printed circuit-board without metallization pad. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient CONDITIONS lead length 10 mm lead length 10 mm; note 1 VALUE 240 350 UNIT K/W