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20N60

20A, 600V N-CHANNEL POWER MOSFET
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Manufacturer
Unisonic Technologies
Description

The UTC20N60is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode.

 

The UTC 20N60 is universally applied in motor control, UPS, DC choppers and switch-mode and resonant-mode power supplies.

 

20N60 Features

 

  • • RDS(ON) = 0.45Ω @VGS = 10V
  • • High switching speed
Parametrics
Maximum Drain-Source Voltage VDSS600 V
Maximum Drain-Source Voltage VDSS±20 V
Maximum (Continuous) ID20 A
Maximum (Pulsed) IDM80 A
Avalanche Energy Single Pulsed EAS1200 mJ
Maximum Power Dissipation (TO-3P) PD300 W
Maximum Power Dissipation (TO-247) PD370 W
Junction Temperature TJ+150 °C
Storage Temperature TSTG-55 to +150 °C
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