Homedatasheet2N2150

2N2150 Datasheet

NPN Transistor, Package : TO-111
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Description

Features, Applications

MAXIMUM RATINGS (TC = 250C unless otherwise noted) Ratings Symbol Value

Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation = +1000C(1) Operating & Storage Junction Temperature Range VCEO VCBO VEBO IC PT TJ, Tstg Symbol RJC to +200 Max. 3.3

Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 0.3 W/0C for > +1000C
Characteristics Symbol V(BR)CEO VCBO ICEO ICBO ICEX IEBO ICES Min. Max. Unit Vdc �Adc

Collector-Emitter Breakdown Voltage = 50 mAdc Collector-Emitter Breakdown Voltage = 100 �Adc Collector-Emitter Cutoff Current VCE = 80 Vdc Collector-Base Cutoff Current VCB = 120 Vdc Collector-Emitter Cutoff Current VCE = 120 Vdc, VBE = -1.0 Vdc Emitter-Base Cutoff Current VEB = 8.0 Vdc Collector-Emitter Cutoff Current VCE = 120 Vdc, VBE = 0 Vdc

Forward-Current Transfer Ratio = 1.0 Adc, VCE = 5.0 Vdc = 0.5 Adc, VCE = 5.0 Vdc = 0.1 Adc, VCE = 5.0 Vdc = 1.0 Adc, VCE = 5.0 Vdc = 0.5 Adc, VCE = 5.0 Vdc = 0.1 Adc, VCE = 5.0 Vdc Base-Emitter Voltage Non -Saturated VCE = 5.0 Vdc, IC =1.0 Adc Collector-Emitter Saturation Voltage = 1.0 Adc, = 0.1 Adc Base-Emitter Saturation Voltage = 1.0 Adc, = 0.1 Adc

Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio = 0.1 mAdc, VCE = 30 Vdc, = 10 MHz Output Capacitance VCB = 20 Vdc, 0, 100 kHz f 1.0 MHz hfe Cobo 7.0 pF

Test 1 VCE = 15 Vdc, = 2.0 Adc Test 2 VCE = 57 Vdc, = 200 mAdc Test 3 VCE = 100 Vdc, = 25 mAdc

Features

Parameters

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Manufacturer information

MICROSEMI CORPORATION

Microsemi Corporation offers a comprehensive portfolio of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world’s standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services.

Microsemi is now a subsidiary of Microchip Technology Inc.


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