2N2222A product image

2N2222A

High Speed Switching Transistor
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Manufacturer
STMICROELECTRONICS [STMicroelectronics]
FAIRCHILD [Fairchild Semiconductor]
NXP Semiconductors
SECOS [SeCoS Halbleitertechnologie GmbH]
NJSEMI [New Jersey Semi-Conductor Products, Inc.]
CENTRAL [Central Semiconductor Corp]
SEME-LAB [Seme LAB]
SIEMENS [Siemens Semiconductor Group]
TGS [Tiger Electronic Co.,Ltd]
BOCA [Boca Semiconductor Corporation]
MICROSEMI [Microsemi Corporation]
COMSET [Comset Semiconductor]
MICRO-ELECTRONICS [Micro Electronics]
Semicoa Semiconductor
Description

 

The 2N2222A is silicon Planar Epitaxial NPN transistors in Jedec TO-18 metal case. It is designed for high speed switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltage.

 

2N2222A  Features

 

• High current (max. 800 mA)

• Low voltage (max. 40 V)

 

2N2222A  Applications

 

Linear amplification and switching

Parametrics
Maximum Collector – Base Voltage VCBO75V
Maximum Collector – Emitter Voltage VCEO40V
Maximum Emitter – Base Voltage VEBO6V
Maximum Collector Current IC800mA
Maximum Total Device Dissipation @ TA = 25°C PD0.5W
Maximum Derate above 25°C @ TA = 25°C PD3.33mW / °C
Maximum Total Device Dissipation @ TC = 25°C PD1.8W
Maximum Derate above 25°C @ TC = 25°C PD12.05mW / °C
Maximum Operating Junction Temperature TJ175°C
Maximum Storage Junction Temperature Range TSTG–65 to +200°C
2N2222A Replacement Parts
2N2222A Price
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