Homedatasheet2N3055

2N3055 Datasheet

Power Transistor
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Description

The 2N3055 is a silicon Epitaxial-Base Planar NPN transistor mounted in Jedec TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.The complementary PNP type is MJ2955. 2N3055 Features •Low collector-emitter saturation voltage•Complementary NPN - PNP transistors2N3055 Applications •General purpose•Audio Amplifier IF you want know more about 2N3055 please download 2N3055 datasheet pdf.
Features

Parameters

[{"Name":"VCBO Collector-emitter voltage (IE = 0)","Value":"100V"},{"Name":"VCER Collector-emitter voltage (RBE = 100 Ω)","Value":"70V"},{"Name":"VCEO Collector-emitter voltage (IB = 0)","Value":"60V"},{"Name":"VEBO Collector-base voltage (IC = 0)","Value":"7V"},{"Name":"IC Collector current","Value":"15A"},{"Name":"IB Base current","Value":"7A"},{"Name":"PTOT Total dissipation at Tc ≤ 25°C","Value":"115W"},{"Name":"Tstg Storage temperature","Value":"65-200°C"},{"Name":"TJ Max. operating junction temperature","Value":"200°C"},{"Name":"","Value":""}]

Manufacturer information

SIEMENS [SIEMENS SEMICONDUCTOR GROUP]
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