2N5401G product image

2N5401G

Transistors
likes(0)bads(1)
Manufacturer
ON Semiconductor
Description
 
Transistors Bipolar ( 2N5401G )- BJT 500mA 160V PNP
 
2N5401G Features
 
• These are Pb−Free Devices
Parametrics
Collector- Base Voltage VCBO:160 V
Collector- Emitter Voltage VCEO Max:150 V
Emitter- Base Voltage VEBO:5 V
Collector-Emitter Saturation Voltage:0.5 V
Maximum DC Collector Current:0.6 A
DC Collector/Base Gain hfe Min:50 at 1 mA at 5 V
Maximum Operating Temperature:+ 150 C
Minimum Operating Temperature:- 55 C
Maximum Power Dissipation:625 mW
Continuous Collector Current:0.6 A
2N5401G Price
Reference price:
2N5401G
Quote within 24 hours
Request for Quotation
Part No.:
2N5401G
*Quantity :
*Name :
*Email :
Phone/MP :
 
SMBJ13Transient Voltage Suppression DiodesONSEMI [ON Semiconductor]
1PS79SB10Schottky Diodes & RectifiersNXP Semiconductors
TL074CDTOperational Amplifiers - Op AmpsTexas Instruments
AD7710ARZAnalog to Digital Converters - ADCTexas Instruments
IRF840STRRFETs - SingleSTMICROELECTRONICS [STMicroelectronics]
AD8605ARTZ-REEL7ecision AmplifiersTexas Instruments(texas)
MBR340RLGDiodes & RectifiersTexas Instruments(texas)
UC3845High Performance Current Mode PWM ControllersGE [General Semiconductor]
SN74LV373ANSRLatchesMOTOROLA [Motorola, Inc]
STA013Interface - Encoders, Decoders, ConvertersNXP Semiconductors