2N5401G product image

2N5401G

Transistors
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Manufacturer
ON Semiconductor
Description
 
Transistors Bipolar ( 2N5401G )- BJT 500mA 160V PNP
 
2N5401G Features
 
• These are Pb−Free Devices
Parametrics
Collector- Base Voltage VCBO:160 V
Collector- Emitter Voltage VCEO Max:150 V
Emitter- Base Voltage VEBO:5 V
Collector-Emitter Saturation Voltage:0.5 V
Maximum DC Collector Current:0.6 A
DC Collector/Base Gain hfe Min:50 at 1 mA at 5 V
Maximum Operating Temperature:+ 150 C
Minimum Operating Temperature:- 55 C
Maximum Power Dissipation:625 mW
Continuous Collector Current:0.6 A
2N5401G Price
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2N5401G
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