These 2N7002 n-channel enhancement mode field effect transistors are produced using National's very high cell density third generation DMOS technology. These products have been designed to minimize on-state resistance provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2A. This product is particularly suited to low voltage, low current applications, such as small servo motor controls, power MOSFET gate drivers, and other switching applications.
- • Efficient high density cell design approaching (3 million/in2)
- •Voltage controlled small signal switch
- • Rugged
- •High saturation current
- • Low RDS (ON)