Adoption of FBET, MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage. Fast switching speed.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
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Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Conditions Ratings Unit �C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturatin Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Saturation Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Turn-OFF Time Symbol ICBO IEBO hFE2 fT Cob VCE(sat) VBE(sat) IC=�2.5A, IB=�125mA MHz pF ns Conditions Ratings min typ max �1 280* Unit �A
V(BR)CBO IC=�100�A, IE=0 V(BR)CEO IC=�1mA, RBE= V(BR)EBO IE=�100�A, IC=0 ton See specified Test Circuit tstg toff See specified Test Circuit See specified Test Circuit