2SC1969 product image

2SC1969

Silicon NPN Power Transistor

likes(2)bads(4)

Manufacturer

Description

2SC1969is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF band mobile radio applications.

2SC1969 Features

·High Power Gain:: Gpe≥12dB@VCC= 12V,f= 27MHz, PO= 16W
·Emitter ballasted construction for high reliability and good performances
·TO-220 package similarly is combinient for mounting
·Ability of withstanding infinite load VSWR when operated at VCC= 12V,f= 27MHz, PO= 16W

Parametrics

MAXIMUM Collector-Base Voltage VCBO	60 V
MAXIMUM Collector-Emitter Voltage RBE= ∞ VCEO	25 V
MAXIMUM Emitter-Base Voltage VEBO	5 V
MAXIMUM Collector Current IC	6 A
MAXIMUM Collector Power Dissipation @TC=25℃ PC	20 W
MAXIMUM Collector Power Dissipation @Ta=25℃ PC	1.7 W
Junction Temperature Tj	150 ℃
Storage Temperature Range Tstg	-55 to150 ℃
Thermal Resistance,Junction to Ambient Rth j-a	73.5 ℃/W
Thermal Resistance,Junction to Case Rth j-c	6.25 ℃/W

2SC1969 Replacement Parts

2SC1969 Price

Reference price:

2SC1969

Quote within 24 hours

Request for Quotation

Part No.:

2SC1969

*Quantity :

*Name :

*Email :

Phone/MP :

: SN74LS244NE4Buffers & Line DriversMCC [Micro Commercial Components]

: LM317MDT3-Terminal Adjustable RegulatorInternational Rectifier

: IR2151SPBFPower Driver ICsSTMICROELECTRONICS [STMicroelectronics]

: FDS6680ASFETs - SingleDiodes Incorporated

: TIP42Silicon PNP Power TransistorsMOTOROLA [Motorola, Inc]

: AD8109ASTZAnalog & Digital Crosspoint ICsAnalog Devices

: AD590KRZ-RLBoard Mount Temperature SensorsMaxim Integrated

: TLC0832CPAnalog to Digital Converters - ADCInfineon Technologies

: STB12NM50T4MOSFETDiodes Incorporated

: ILD207Tsilicon NPN phototransistorCystech Electonics Corp.