2SC1969is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF band mobile radio applications.
- ·High Power Gain:: Gpe≥12dB@VCC= 12V,f= 27MHz, PO= 16W
- ·Emitter ballasted construction for high reliability and good performances
- ·TO-220 package similarly is combinient for mounting
- ·Ability of withstanding infinite load VSWR when operated at VCC= 12V,f= 27MHz, PO= 16W