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2SC1969

Silicon NPN Power Transistor

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Description

2SC1969is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF band mobile radio applications.

2SC1969 Features

·High Power Gain:: Gpe≥12dB@VCC= 12V,f= 27MHz, PO= 16W
·Emitter ballasted construction for high reliability and good performances
·TO-220 package similarly is combinient for mounting
·Ability of withstanding infinite load VSWR when operated at VCC= 12V,f= 27MHz, PO= 16W

Parametrics

MAXIMUM Collector-Base Voltage VCBO	60 V
MAXIMUM Collector-Emitter Voltage RBE= ∞ VCEO	25 V
MAXIMUM Emitter-Base Voltage VEBO	5 V
MAXIMUM Collector Current IC	6 A
MAXIMUM Collector Power Dissipation @TC=25℃ PC	20 W
MAXIMUM Collector Power Dissipation @Ta=25℃ PC	1.7 W
Junction Temperature Tj	150 ℃
Storage Temperature Range Tstg	-55 to150 ℃
Thermal Resistance,Junction to Ambient Rth j-a	73.5 ℃/W
Thermal Resistance,Junction to Case Rth j-c	6.25 ℃/W

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