2SC2879 product image

2SC2879

NPN SILICON RF POWER TRANSISTOR
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Manufacturer
TOSHIBA Semiconductor
Advanced Semiconductor
Description

 

The 2SC2879 is a 12.5 V transistor designed primarily for SSB linear power amplifier applications up tp 28 MHz.

 

2SC2879 Features

 

• PG = 13 Typ. min. at 100 W/28 MHz

• IMD3 = -24 dBc max. at 100 W(PEP)

• Omnigold™ Metalization System

Parametrics
Maximum Collector-Base Voltage VCBO45 V
Maximum Collector-Emitter Voltage VCES45 V
Maximum Collector- Emitter Voltage VCEO18 V
Maximum Emitter-Base Voltage VEBO4 V
Maximum Collector Current IC25 A
Maximum Collector Power Dissipation PC250 W
Maximum Junction Temperature Tj175 °C
Maximum Storage Temperature Range Tstg– 65 to 175 °C
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