PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor
Adoption of MBIT process. High breakdown voltage (VCEO400V). Excellent linearity of hFE.
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Colletor Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol ICBO IEBO hFE fT Cob Cre VCE(sat) VBE(sat) IC=(�)50mA, IB=(�)5mA Conditions Ratings min typ max (�)0.1 200* MHz pF V Unit �A
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Parameter Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Turn-OFF Time Symbol V(BR)CBO IC=(�)10�A, IE=0 V(BR)CEO IC=(�)1mA, RBE= V(BR)EBO ton toff IE=(�)10�A, IC=0 See specified Test Circuit See specified Test Circuit Conditions Ratings min typ max Unit V �sat IC=50mA (For PNP, the polarity is reversed) Unit (resistance : , capacitance : F)