FET, Silicon N Channel Junction Type(for Low Noise Audio Amplifier)
Features
- • Recommended for first stages of EQ and M.C. head amplifiers.
- • High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA)
- • High breakdown voltage: VGDS = −40 V
- • Low noise: En = 0.95 nV/Hz1/2 (typ.)
(VDS = 10 V, ID = 1 mA, f = 1 kHz)
- • High input impedance: IGSS = −1 nA (max) (VGS = −30 V)