2SK170 product image

2SK170

Low Noise Audio Amplifier Applications
likes(0)bads(0)
Manufacturer
TOSHIBA Semiconductor
Description

 

FET, Silicon N Channel Junction Type(for Low Noise Audio Amplifier)

 

Features

 

  • • Recommended for first stages of EQ and M.C. head amplifiers.
  • • High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA)
  • • High breakdown voltage: VGDS = −40 V
  • • Low noise: En = 0.95 nV/Hz1/2 (typ.)

           (VDS = 10 V, ID = 1 mA, f = 1 kHz)

  • • High input impedance: IGSS = −1 nA (max) (VGS = −30 V)
Parametrics
Gate-drain voltage VGDS-40 V
Gate current IG10 mA
Drain power dissipation PD400 mW
Junction temperature Tj125 °C
Storage temperature range Tstg-55~125 °C
2SK170 Replacement Parts
2SK170 Price
Reference price:
2SK170
Quote within 24 hours
Request for Quotation
Part No.:
2SK170
*Quantity :
*Name :
*Email :
Phone/MP :
 
MC14015BDR2Dual 4-Bit Static Shift RegisterVISHAY [Vishay Siliconix]
LM2904PSRG4Operational Amplifiers - Op Ampsfreescale
74HCT02DLogic GatesTexas Instruments
FGH40N60SFDTUIGBT TransistorsON Semiconductor
SN74HC541NSRE4Logic - Buffers, Drivers, Receivers, TransceiversTexas Instruments
SSU2N60TransistorsON Semiconductor
sn74lvc1t45SINGLE-BIT DUAL-SUPPLY BUS TRANSCEIVER WITH CONFIGURABLE VOLTAGE TRANSLATION AND 3-STATE OUTPUTS
SMBJ58A-TRTVS - DiodesFAIRCHILD Semiconductor
74HC04DR2GInvertersFAIRCHILD Semiconductor
4N25SR2VMTransistor Output OptocouplersInfineon Technologies