This product is N-Channel MOS Field Effect Transistor designed for high current switching application.FEATURES
Low on-state resistance 17 m MAX. (VGS 27 m MAX. (VGS = 23 A) Low Ciss: Ciss 2100 pF TYP. Built-in gate protection diode Isolated TO-220 package
Drain to Source Voltage Gate to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT Tch Tstg
Total Power Dissipation (Tc = 25�C) Total Power Dissipation (Ta = 25�C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche EnergyChannel to Case Channel to Ambient Rth(ch-c) Rth(ch-a) 4.17 62.5 �C/W
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.Document No. D13096EJ1V0DS00 (1st edition) Date Published March 1999 NS CP(K) Printed in Japan
CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VGS 23 A VGS 23 A VDS 1 mA VDS 23 A VDS 60 V, VGS 0 V VGS �20 V, VDS 0 V VDS 10 V VGS MHz 23 A VGS(on) 10 V VDD 45 A VDD 48 V VGS(on) 45 A, VGS 45 A, VGS 0 V di/dt / �s MIN. TYP. MAX. 27 2.0 UNITDERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed 100