FEATURES Superb Clamping Characteristics 3 mV Clamp Error 1.5 ns Overdrive Recovery Minimized Nonlinear Clamping Region 240 MHz Clamp Input Bandwidth 3.9 V Clamp Input Range Wide Bandwidth AD8036 AD8037 Small Signal 240 MHz 270 MHz Large Signal (4 V p-p) 195 MHz 190 MHz Good DC Characteristics 2 mV Offset V/ C Drift Ultralow Distortion, Low Noise �72 dBc typ @ 20 MHz 4.5 nV/ Hz Input Voltage Noise High Speed Slew Rate V/ s Settling 5 V Supply Operation APPLICATIONS ADC Buffer IF/RF Signal Processing High Quality Imaging Broadcast Video Systems Video Amplifier Full Wave Rectifier PRODUCT DESCRIPTIONLow Distortion, Wide Bandwidth Voltage Feedback Clamp Amps AD8036/AD8037
FUNCTIONAL BLOCK DIAGRAM 8-Lead Plastic DIP (N), Cerdip (Q), and SO Packages
and large-signal bandwidths and ultralow distortion. The AD8036 achieves �66 dBc at 20 MHz, and 240 MHz smallsignal and 195 MHz large-signal bandwidths. The AD8036 and AD8037's recover from 2� clamp overdrive within 1.5 ns. These characteristics position the AD8036/AD8037 ideally for driving as well as buffering flash and high resolution ADCs. In addition to traditional output clamp amplifier applications, the input clamp architecture supports the clamp levels as additional inputs to the amplifier. As such, in addition to static dc clamp levels, signals with speeds to 240 MHz can be applied to the clamp pins. The clamp values can also be set to any value within the output voltage range provided that VH is greater that VL. Due to these clamp characteristics, the AD8036 and AD8037 can be used in nontraditional applications such as a full-wave rectifier, a pulse generator, or an amplitude modulator. These novel applications are only examples of some of the diverse applications which can be designed with input clamps. The AD8036 is offered in chips, industrial +85� C) and military to +125�C) package temperature ranges and the AD8037 in industrial. Industrial versions are available in plastic DIP and SOIC; MIL versions are packaged in cerdip.
The AD8036 and AD8037 are wide bandwidth, low distortion clamping amplifiers. The AD8036 is unity gain stable. The AD8037 is stable at a gain of two or greater. These devices allow the designer to specify a high (VCH) and low (VCL ) output clamp voltage. The output signal will clamp at these specified levels. Utilizing a unique patent pending CLAMPINTM input clamp architecture, the AD8036 and AD8037 offer a 10� improvement in clamp performance compared to traditional output clamping devices. In particular, clamp error is typically mV or less and distortion in the clamp region is minimized. This product can be used as a classical op amp or a clamp amplifier where a high and low output voltage are specified. The AD8036 and AD8037, which utilize a voltage feedback architecture, meet the requirements of many applications which previously depended on current feedback amplifiers. The AD8036 and AD8037 exhibit an exceptionally fast and accurate pulse response to 0.01%), extremely wide small-signal
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Parameter DYNAMIC PERFORMANCE Bandwidth (�3 dB) Small Signal Large Signal 1 Bandwidth for 0.1 dB Flatness Slew Rate, Average Rise/Fall Time Settling Time To 0.01% HARMONIC/NOISE PERFORMANCE 2nd Harmonic Distortion 3rd Harmonic Distortion 3rd Order Intercept Noise Figure Input Voltage Noise Input Current Noise Average Equivalent Integrated Input Noise Voltage Differential Gain Error (3.58 MHz) Differential Phase Error (3.58 MHz) Phase Nonlinearity CLAMP PERFORMANCE Clamp Voltage Range 2 Clamp Accuracy Clamp Nonlinearity Range3 Clamp Input Bias Current (VH or VL) Clamp Input Bandwidth (�3 dB) Clamp Overshoot Overdrive Recovery DC PERFORMANCE = 150 Input Offset Voltage 5 Offset Voltage Drift Input Bias Current TMIN �TMAX Input Offset Current Common-Mode Rejection Ratio Open-Loop Gain INPUT CHARACTERISTICS Input Resistance Input Capacitance Input Common-Mode Voltage Range OUTPUT CHARACTERISTICS Output Voltage Range, = 150 Output Current Output Resistance Short Circuit Current POWER SUPPLY Operating Range Quiescent Current Power Supply Rejection Ratio TMIN �TMAX TMIN �TMAX � 3.2 TMIN �TMAX VCM VOUT 2.5 V TMIN �TMAX Conditions
VOUT 0.4 V p-p 150 8036, VOUT 2.5 V p-p; 8037, VOUT 3.5 V p-p 160 VOUT 0.4 V p-p = 274 VOUT 4 V Step, 10�90% 900 VOUT 0.5 V Step, 10�90% VOUT 4 V Step, 10�90% VOUT 2 V Step VOUT 2 V Step 2 V p-p; 20 MHz, 2 V p-p; 20 MHz, 500 25 MHz 50 1 MHz to 200 MHz 1 MHz to 200 MHz 0.1 MHz to 200 MHz to 100 MHz VCH 2 � Overdrive, +2 V, VCL �2 V TMIN�TMAX 8036, VH, V; 8037, VH, 0.5 V TMIN�TMAX VCH 2 V p-p 2� Overdrive, 2 V p-p 2� Overdrive � 3.3
NOTES 1 See Max Ratings and Theory of Operation sections of data sheet. 2 See Max Ratings. 3 Nonlinearity is defined as the voltage delta between the set input clamp voltage (VH V L) and the voltage at which V OUT starts deviating from VIN (see Figure 73). 4 Measured 50. 5 Measured with respect to the inverting input. Specific ations subject to change without notice.ABSOLUTE MAXIMUM RATINGS 1 MAXIMUM POWER DISSIPATION
Supply Voltage. 12.6 V Voltage Swing � Bandwidth Product. 350 V-MHz |VH�VIN|. 6.3 V |VL�VIN|. 6.3 V Internal Power Dissipation2 Plastic DIP Package (N). 1.3 Watts Small Outline Package (SO). 0.9 Watts Input Voltage (Common Mode). � VS Differential Input Voltage. 1.2 V Output Short Circuit Duration. Observe Power Derating Curves Storage Temperature Range to +125�C Operating Temperature Range (A Grade). to +85�C Lead Temperature Range (Soldering 10 sec). +300�C
NOTES 1 Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 Specification is for device in free air: 8-Lead Plastic DIP: = 90 �C/W 8-Lead SOIC: 155�C/W 8-Lead Cerdip: = 110�C/W.
The maximum power that can be safely dissipated by these devices is limited by the associated rise in junction temperature. The maximum safe junction temperature for plastic encapsulated devices is determined by the glass transition temperature of the plastic, approximately +150�C. Exceeding this limit temporarily may cause a shift in parametric performance due to a change in the stresses exerted on the die by the package. Exceeding a junction temperature of +175�C for an extended period can result in device failure. While the AD8036 and AD8037 are internally short circuit protected, this may not be sufficient to guarantee that the maximum junction temperature C) is not exceeded under all conditions. To ensure proper operation, it is necessary to observe the maximum power derating curves.2.0 MAXIMUM POWER DISSIPATION � Watts 8-LEAD PLASTIC DIP PACKAGE = +150C
Dimensions shown in inches and (mm). Connect Substrate to �VS.
Figure 2. Plot of Maximum Power Dissipation vs. Temperature
Plastic DIP SOIC 13" Tape and Reel 7" Tape and Reel Die Evaluation Board +125� C Cerdip Plastic DIP SOIC 13" Tape and Reel 7" Tape and Reel Die Evaluation Board
CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although these devices feature proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.