CDC209 Replaces 74AC11208 CDC209-7 Replaces 74AC11208-7 Low-Skew Propagation Delay Specifications for Clock-Driver Applications CMOS-Compatible Inputs and Outputs Flow-Through Architecture Optimizes PCB Layout Characterized for Operation at 5-V and 3.3-V VCC Center-Pin VCC and GND Pin Configurations Minimize High-Speed Switching Noise EPIC TM (Enhanced-Performance Implanted CMOS) 1-�m Process 500-mA Typical Latch-Up Immunity at 125�C Package Options Include Plastic Small-Outline Package (DW) and Standard Plastic 300-mil DIPs (N)description
The CDC209/209-7 contains dual clock-driver circuits that fanout one input signal to four outputs with minimum skew for clock distribution (see Figure 2). The device also offers two output-enable (OE1 and OE2) inputs for each circuit that can force the outputs to be disabled to a high-impedance state to a high- or low-logic level independent of the signal on the respective A input. Skew parameters are specified for a reduced temperature and voltage range common to many applications. The CDC209/209-7 is characterized for operation fromTA to 85�C.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. EPIC is a trademark of Texas Instruments Incorporated.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.This symbol is in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12.
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage range, VCC. 7 V Input voltage range, VI (see Note V to VCC 0.5 V Output voltage range, VO (see Note V to VCC 0.5 V Input clamp current, IIK (VI VI > VCC). 20 mA Output clamp current, IOK (VO VO > VCC). 50 mA Continuous output current, IO (VO 0 to VCC). 50 mA Continuous current through VCC or GND. 200 mA Maximum power dissipation = 55�C (in still air) (see Note 2): DW package. W N package. 1.3 W Storage temperature range, Tstg. to 150�C
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. The input and output negative-voltage ratings may be exceeded if the input and output clamp-current ratings are observed. 2. The maximum package power dissipation is calculated using a junction temperature of 150�C and a board trace length of 750 mils, except for the N package, which has a trace length of zero. For more information, refer to the Package Thermal Considerations application note in the 1994 ABT Advanced BiCMOS Technology Data Book, literature number SCBD002B.
MIN VCC VIH Supply voltage High-level input voltage VCC 3 V VCC 4.5 V VCC 5.5 V VCC 3 V VIL VI IOH Low-level input voltage Input voltage High-level output current VCC 3 V VCC 4.5 V VCC 5.5 V VCC 3 V IOL / v fclock TA Low-level output current Input transition rise or fall rate Input clock frequency Operating free-air temperature � 40 VCC 4.5 V VCC V 0 VCC 4.5 V VCC 5.5 V VCC / V MHz mA V NOM 5 MAX 5.5 UNIT V