HomedatasheetAD600JR

AD600JR Datasheet

Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps
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Description

The AD600JR /AD6021 dual channel, low noise, variable gain amplifiers are optimized for use in ultrasound imaging systems but are applicable to any application requiring precise gain, low noise and distortion, and wide bandwidth. Each independent channel provides a gain of 0 dB to +40 dB in the AD600 and −10 dB to +30 dB in the AD602. The lower gain of the AD602 results in an improved signal-to-noise ratio (SNR) at the output. However, both products have the same 1.4 nV/√Hz input noise spectral density. The decibel gain is directly proportional to the control voltage, accurately calibrated, and supply and temperature stable.To achieve the difficult performance objectives, a proprietary circuit form, the X-AMP®, was developed. Each channel of the X-AMP comprises a variable attenuator of 0 dB to −42.14 dB followed by a high speed fixed gain amplifier. In this way, the amplifier never has to cope with large inputs and can benefit from the use of negative feedback to precisely define the gain and dynamics. The attenuator is realized as a 7-stage R-2R ladder network having an input resistance of 100 Ω, laser trimmed to ±2%. The attenuation between tap points is 6.02 dB; the gain-control circuit provides continuous interpolation between these taps. The resulting control function is linear in dB. AD600JR Features • 2 channels with independent gain controlLinear in dB gain response• 2 gain rangesAD600: 0 dB to 40 dBAD602: –10 dB to +30 dB• Accurate absolute gain: ±0.3 dB• Low input noise: 1.4 nV/√Hz• Low distortion: −60 dBc THD at ±1 V output• High bandwidth: dc to 35 MHz (−3 dB)• Stable group delay: ±2 ns• Low power: 125 mW (maximum) per amplifier• Signal gating function for each amplifier• Drives high speed ADCs• MIL-STD-883-compliant and DESC versions available AD600JR Applications • Ultrasound and sonar time-gain controls• High performance audio and RF AGC systems• Signal measurement
Features

Parameters

[{"Name":"Number of Circuits","Value":"2"},{"Name":"Slew Rate","Value":"275 V/μs"},{"Name":"-3db Bandwidth","Value":"35MHz"},{"Name":"Current - Input Bias","Value":"350nA"},{"Name":"Current - Supply","Value":"11mA"},{"Name":"Current - Output / Channel","Value":"50mA"},{"Name":"Voltage - Supply, Single/Dual (±)","Value":"±4.75 V ~ 5.25 V"},{"Name":"Operating Temperature","Value":"0°C ~ 70°C"},{"Name":"","Value":""},{"Name":"","Value":""}]

Manufacturer information

DIODES INCORPORATED

Diodes Incorporated is a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic, analog and mixed-signal semiconductor markets. Diodes serves the consumer electronics, computing, communications, industrial, and automotive markets.
Diodes’ products include diodes, rectifiers, transistors, MOSFETs, protection devices, function-specific arrays, single gate logic, amplifiers and comparators, Hall-effect and temperature sensors, power management devices, including LED drivers, AC-DC converters and controllers, DC-DC switching and linear voltage regulators, and voltage references along with special function devices, such as USB power switches, load switches, voltage supervisors, and motor controllers.
Diodes’ corporate headquarters and Americas’ sales office are located in Plano, Texas and Milpitas, California. Design, marketing, and engineering centers are located in Plano; Milpitas; Taipei, Taiwan; Taoyuan City, Taiwan; Zhubei City, Taiwan; Manchester, England; and Neuhaus, Germany. Diodes’ wafer fabrication facilities are located in Manchester and Shanghai, China. Diodes has assembly and test facilities located in Shanghai, Jinan, Chengdu, and Yangzhou, China, as well as in Hong Kong, Neuhaus and Taipei. Additional engineering, sales, warehouse, and logistics offices are located in Taipei; Hong Kong; Manchester; Shanghai; Shenzhen, China; Seongnam-si, South Korea; and Munich, Germany, with support offices throughout the world.

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