HomedatasheetAD648JR

AD648JR Datasheet

Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps
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Description

The AD648JR is a matched pair of low power, precision monolithicoperational amplifiers. It offers both low bias current(10 pA max, warmed up) and low quiescent current (400 mAmax) and is fabricated with ion-implanted FET and laser wafertrimming technologies. Input bias current is guaranteed over theAD648’s entire common-mode voltage range.The economical J grade has a maximum guaranteed offset voltageof less than 2 mV and an offset voltage drift of less than20 mV/°C. The C grade reduces offset voltage to less than0.30 mV and offset voltage drift to less than 3 mV/°C. This levelof dc precision is achieved utilizing Analog’s laser wafer drifttrimming process. The combination of low quiescent currentand low offset voltage drift minimizes changes in input offsetvoltage due to self-heating effects. Five additional grades areoffered over the commercial, industrial and military temperatureranges.The AD648 is recommended for any dual supply op amp applicationrequiring low power and excellent dc and ac performance.In applications such as battery-powered, precisioninstrument front ends and CMOS DAC buffers, the AD648’sexcellent combination of low input offset voltage and drift, lowbias current and low 1/f noise reduces output errors. Highcommon-mode rejection (86 dB, min on the “C” grade) andhigh open-loop gain ensures better than 12-bit linearity in highimpedance, buffer applications.The AD648 is pinned out in a standard dual op amp configurationand is available in seven performance grades. The AD648Jand AD648K are rated over the commercial temperature rangeof 0°C to +70°C. The AD648A, AD648B and AD648C arerated over the industrial temperature rangeof –40°C to +85°C.The AD648S and AD648T are rated over the military temperaturerange of –55°C to +125°C and are available processed toMIL-STD-883B, Rev. C.The AD648 is available in an 8-pin plastic mini-DIP, cerdip,SOIC, TO-99 metal can, or in chip form. AD648JR Features • DC Performance400 mA max Quiescent Current10 pA max Bias Current, Warmed Up (AD648C)300 mV max Offset Voltage (AD648C)3 mV/8C max Drift (AD648C)2 mV p-p Noise, 0.1 Hz to 10 Hz• AC Performance1.8 V/ms Slew Rate1 MHz Unity Gain Bandwidth• Available in Plastic Mini-DIP, Cerdip, Plastic SOICand Hermetic Metal Can Packages• MIL-STD-883B Parts Available• Surface Mount (SOIC) Package Available in Tape andReel in Accordance with EIA-481A Standard• Single Version: AD548
Features

Parameters

[{"Name":"Number of Circuits","Value":"2"},{"Name":"Slew Rate","Value":"1.8 V/μs"},{"Name":"Gain Bandwidth Product","Value":"1MHz"},{"Name":"Current - Input Bias","Value":"5pA"},{"Name":"Voltage - Input Offset","Value":"750μV"},{"Name":"Current - Supply","Value":"340μA"},{"Name":"Current - Output / Channel","Value":"15mA"},{"Name":"Voltage - Supply, Single/Dual (±)","Value":"±4.5 V ~ 18 V"},{"Name":"Operating Temperature","Value":"0°C ~ 70°C"},{"Name":"","Value":""}]

Manufacturer information

DIODES INCORPORATED

Diodes Incorporated is a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic, analog and mixed-signal semiconductor markets. Diodes serves the consumer electronics, computing, communications, industrial, and automotive markets.
Diodes’ products include diodes, rectifiers, transistors, MOSFETs, protection devices, function-specific arrays, single gate logic, amplifiers and comparators, Hall-effect and temperature sensors, power management devices, including LED drivers, AC-DC converters and controllers, DC-DC switching and linear voltage regulators, and voltage references along with special function devices, such as USB power switches, load switches, voltage supervisors, and motor controllers.
Diodes’ corporate headquarters and Americas’ sales office are located in Plano, Texas and Milpitas, California. Design, marketing, and engineering centers are located in Plano; Milpitas; Taipei, Taiwan; Taoyuan City, Taiwan; Zhubei City, Taiwan; Manchester, England; and Neuhaus, Germany. Diodes’ wafer fabrication facilities are located in Manchester and Shanghai, China. Diodes has assembly and test facilities located in Shanghai, Jinan, Chengdu, and Yangzhou, China, as well as in Hong Kong, Neuhaus and Taipei. Additional engineering, sales, warehouse, and logistics offices are located in Taipei; Hong Kong; Manchester; Shanghai; Shenzhen, China; Seongnam-si, South Korea; and Munich, Germany, with support offices throughout the world.

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