BDX53CG product image

BDX53CG

Transistors
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Manufacturer
ONSEMI [ON Semiconductor]
Description

 

These  BDX53CG   devices are designed for general−purpose amplifier and low−speed switching applications.

 

BDX53CG Features

 

• High DC Current Gain −
  hFE = 2500 (Typ) @ IC = 4.0 Adc
• Collector Emitter Sustaining Voltage − @ 100 mAdc
  VCEO(sus) = 80 Vdc (Min) − BDX53B, 54B
  VCEO(sus) = 100 Vdc (Min) − BDX53C, 54C
• Low Collector−Emitter Saturation Voltage −
  VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc
  VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors
• Pb−Free Packages are Available*

Parametrics
ConfigurationSingle
Transistor PolarityNPN
Collector- Emitter Voltage VCEO Max100 V
Emitter- Base Voltage VEBO5 V
Collector- Base Voltage VCBO100 V
Maximum DC Collector Current8 A
Maximum Collector Cut-off Current500 uA
Power Dissipation40 W
Package / CaseTO-220-3
PackagingTube
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