The BF1202WR is a Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1202,BF1202R and BF1202WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively.
• Short channel transistor with high
forward transfer admittance to input
• Low noise gain controlled amplifier
• Partly internal self-biasing circuit to
ensure good cross-modulation
performance during AGC and good
• VHF and UHF applications with 3 to 9 V supply voltage, such as digital and analogue television tuners and professional communications equipment.