BFR 106 E6327 product image

BFR 106 E6327

Infineon Technologies
Transistors(BFR 106 E6327/ E6327 ) RF Bipolar Small Signal NPN Silicon RF TRANSISTOR
BFR 106 E6327 Features
• High linearity low noise RF transistor
• 22 dBm OP1dB and 31 dBm OIP3 @ 900 MHz, 8 V, 70 mA
• For UHF / VHF applications
• Driver for multistage amplifiers
• For linear broadband and antenna amplifiers
• Collector design supports 5 V supply voltage
• Pb-free (RoHS compliant) package
• Qualification report according to AEC-Q101 available
Power Dissipation:700 mW
Maximum Operating Temperature:+ 150 C
Minimum Operating Temperature:- 65 C
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