BU508A product image

BU508A

High Voltage Fast-Switching NPN Power Transistors
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Manufacturer
STMICROELECTRONICS [STMicroelectronics]
ISC [Inchange Semiconductor Company Limited]
MOSPEC [Mospec Semiconductor]
SAVANTIC [Savantic, Inc.]
Description

 

The BU508A is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and use a Hollow Emitter structure to enhance switching speeds.

 

BU508A Features

 

•With TO-3PN package

•High voltage

•High speed switching

 

BU508A Applications

 

•For use in horizontal deflection circuits of large screen colour TV receivers

 

BU508A Pinning

 

1 Base

2 Collector

3 Emitter

Parametrics
Maximum Collector-Emitter Voltage (VBE = 0) VCES1500 V
Maximum Collector-Emitter Voltage (IB = 0) VCEO700 V
Maximum Emitter-Base Voltage (IC = 0) VEBO10 V
Maximum Collector Current IC8 A
Maximum Collector Peak Current (tp < 5 ms) ICM15 A
Maximum Total Dissipation at Tc = 25 oC Ptot125 W
Maximum Insulation Withstand Voltage (RMS) from All Three Leads to Exernal Heatsink Visol2500 V
Maximum Storage Temperature Tstg-65 to 150°C
Maximum Operating Junction Temperature150 °C
BU508A Replacement Parts
BU508A Price
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