BUZ31 H3045A product image

BUZ31 H3045A

Transistors
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Manufacturer
Infineon Technologies
Description
 
Features of the  BUZ31 H3045A are:  N channel. Enhancement mode. Avalanche-rated
Parametrics
Drain-Source Breakdown Voltage:200 V
Gate-Source Breakdown Voltage:+/- 20 V
Continuous Drain Current:14.5 A
Drain-Source On Resistance:200 mOhms
Maximum Operating Temperature:+ 150 C
Minimum Operating Temperature:- 55 C
Power Dissipation:95 W
Rise Time:50 nS
Typical Turn-Off Delay Time:150 nS
Fall Time:60 nS
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BUZ31 H3045A
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