FDA69N25 product image

FDA69N25

MOSFET
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Manufacturer
FAIRCHILD Semiconductor
Description

 

These  FDA69N25   is N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction,electronic lamp ballast based on half bridge topology.

 

FDA69N25 Features

 

•  69A, 250V, RDS(on) = 0.041Ω @VGS = 10 V
•  Low gate charge ( typical 77 nC)
•  Low Crss ( typical 84pF)
•  Fast switching
•  Improved dv/dt capability

Parametrics
Transistor PolarityN-Channel
Drain-Source Breakdown Voltage250 V
Gate-Source Breakdown Voltage+/- 30 V
Continuous Drain Current69 A
Resistance Drain-Source RDS (on)0.041 Ohms
ConfigurationSingle
Maximum Operating Temperature+ 150 C
Mounting StyleThrough Hole
Package / CaseTO-3PN
PackagingTube
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