FQB8N60C product image


FAIRCHILD [Fairchild Semiconductor]
Diodes Inc.


The description of   FQB8N60C  is this N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
FQB8N60C  Features
• 7.5 A, 600 V, RDS(on) = 1.2 Ω (Max) @VGS = 10 V,ID = 3.75 A
• Low Gate Charge (Typ. 28 nC)
• Low Crss (Typ. 12 pF)
• 100% Avalanche Tested
• RoHS Compliant


Drain-Source Breakdown Voltage600 V
Gate-Source Breakdown Voltage+/- 30 V
Continuous Drain Current7.5 A
Resistance Drain-Source RDS (on)1.2 Ohms
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Fall Time64.5 ns
Forward Transconductance gFS (Max / Min)8.7 S
Minimum Operating Temperature- 55 C
FQB8N60C Replacement Parts
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