HN1C01FUGRLFT product image

HN1C01FUGRLFT

Transistors
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Manufacturer
Toshiba
Description

 

The general description of  HN1C01FUGRLFT is Transistors Bipolar - BJT VCEO 50V IC 150mA HFE 120 - 400 150mA.
 
 
HN1C01FUGRLFT  Features
 
• Small package (Dual type) 
• High voltage and high current : VCEO = 50V, IC = 150mA (max) 
• High hFE : hFE = 120~400 
• Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)
Parametrics
CategoryDiscrete Semiconductor Products
Product CategoryTransistors (BJT) - Single
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