HomedatasheetIKW25T120FKSA1

IKW25T120FKSA1 Datasheet

Transistors
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Description

( IKW25T120 )IGBT Transistors LOW LOSS DuoPack 1200V 25A IKW25T120FKSA1 Features • NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)• Low EMI • Low Gate Charge • Very soft, fast recovery anti-parallel EmCon HE diode • Qualified according to JEDEC1 for target applications • Pb-free lead plating; RoHS compliant
Features

Parameters

[{"Name":"Collector- Emitter Voltage VCEO Max:","Value":"1200 V"},{"Name":"Maximum Gate Emitter Voltage:","Value":"+/- 20 V"},{"Name":"Maximum Operating Temperature:","Value":"+ 150 C"},{"Name":"Continuous Collector Current Ic Max:","Value":"50 A"},{"Name":"Minimum Operating Temperature:","Value":"- 40 C"},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""}]

Manufacturer information

SEIKO INSTRUMENTS
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