HomedatasheetIR2103SPBF

IR2103SPBF Datasheet

Power Driver ICs
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Description

The IR2103SPBF are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts. IR2103SPBF Features • Floating channel designed for bootstrap operation• Fully operational to +600V• Tolerant to negative transient voltage• DV/dt immune• Gate drive supply range from 10 to 20V• Undervoltage lockout• 3.3V, 5V and 15V logic compatible• Cross-conduction prevention logic• Matched propagation delay for both channels• Internal set deadtime• High side output in phase with HIN input• Low side output out of phase with LIN input
Features

Parameters

[{"Name":"Number of Drivers","Value":"2"},{"Name":"Rise Time","Value":"170 ns "},{"Name":"Fall Time","Value":"90 ns "},{"Name":"Output Current","Value":"130 mA "},{"Name":"Supply Voltage - Max","Value":"20 V "},{"Name":"Supply Voltage - Min","Value":"10 V "},{"Name":"Supply Current","Value":"30 uA "},{"Name":"Maximum Power Dissipation","Value":"625 mW "},{"Name":"Maximum Operating Temperature","Value":"+ 125 C"},{"Name":"Packaging","Value":"Tube "}]

Manufacturer information

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