IR2108SPBF Datasheet

Power Driver ICs


The IR2108SPBF is high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts. IR2108SPBF Features •Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune•Gate drive supply range from 10 to 20V•Undervoltage lockout for both channels•3.3V, 5V and 15V input logic compatible•Cross-conduction prevention logic•Matched propagation delay for both channels•High side output in phase with HIN input•Low side output out of phase with LIN input•Logic and power ground +/- 5V offset.• Internal 540ns dead-time, and programmable up to 5us with one external RDT resistor (IR21084)•Lower di/dt gate driver for better noise immunity•Available in Lead-Free


[{"Name":"Number of Drivers:","Value":"2"},{"Name":"Rise Time:","Value":"220 ns"},{"Name":"Fall Time:","Value":"80 ns"},{"Name":"Output Current:","Value":"200 mA"},{"Name":" Supply Voltage - Max:","Value":"20 V"},{"Name":"Supply Voltage - Min:","Value":"10 V"},{"Name":"Supply Current:","Value":"1.6 mA"},{"Name":"Maximum Power Dissipation:","Value":"625 mW"},{"Name":"Maximum Operating Temperature:","Value":"+ 125 C"},{"Name":"Minimum Operating Temperature:","Value":"- 40 C"}]

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