IRF3205 product image

IRF3205

Power MOSFET
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Manufacturer
International Rectifierr
Description

IR's HEXFET power MOSFET-  IRF3205 using advanced manufacturing technology and it has a very low on-resistance. Because of these two features , fast converion rate and rugged HEXFET design, IRF3205 becomes  an extremely efficient and reliable, ultra-wide range of applications device.  Looking for Rohs IRF3205 please inquiry our suppliers.

 

IRF3205  Characteristics

 

  • •Advanced technology

  • •Patch installation

  • •Low-end through-hole mounting

  • •Ultra-low-resistance

  • •Dynamic dv / dt rate

  • •175 ° C Operating Temperature

  • •Fast conversion rate

  • •Unleaded environmental  


 

Parametrics
Type of control channelN-Channel
Maximum power dissipation (Pd)150W
Maximum drain-source voltage (Uds)55V
Maximum gate-source voltage (Ugs)10V
Maximum drain current (Id)98A
Maximum junction temperature (Tj)150°C
PackageTO-220AB
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