Manufacturer
Description
The IRF3710PBF is Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. IRF3710PBF Features • Advanced Process Technology• Ultra Low On-Resistance• Dynamic dv/dt Rating• 175°C Operating Temperature• Fast Switching• Fully Avalanche Rated• Lead-Free
Features
Parameters
[{"Name":"Transistor Polarity","Value":"N-Channel "},{"Name":"Drain-Source Breakdown Voltage","Value":"100 V "},{"Name":"Gate-Source Breakdown Voltage","Value":"20 V "},{"Name":"Continuous Drain Current","Value":"57 A "},{"Name":"Mounting Style","Value":"Through Hole "},{"Name":"Package / Case","Value":"TO-220AB "},{"Name":"Packaging","Value":"Tube "}]
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