HomedatasheetIRF4905S

IRF4905S Datasheet

Power Mosfet
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Description

Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. IRF4905S Features • Advanced Process Technology• Ultra Low On-Resistance• 150°C Operating Temperature• Fast Switching• Repetitive Avalanche Allowed up to Tjmax• Some Parameters Are Differrent from IRF4905S• Lead-Free
Features

Parameters

[{"Name":"Drain-Source Breakdown Voltage","Value":"- 55 V "},{"Name":"Continuous Drain Current","Value":"- 70 A "},{"Name":"Resistance Drain-Source RDS (on)","Value":"20 mOhms "},{"Name":"Configuration","Value":"Single "},{"Name":"Maximum Operating Temperature","Value":"+ 150 C "},{"Name":"Forward Transconductance gFS (Max / Min)","Value":"19 S"},{"Name":"Gate Charge Qg","Value":"180 nC"},{"Name":"Power Dissipation","Value":"170 W "},{"Name":"","Value":""},{"Name":"","Value":""}]

Manufacturer information

WUXI YOUDA ELECTRONICS CO.,LTD
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