IRF4905S Datasheet

Power Mosfet


Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. IRF4905S Features • Advanced Process Technology• Ultra Low On-Resistance• 150°C Operating Temperature• Fast Switching• Repetitive Avalanche Allowed up to Tjmax• Some Parameters Are Differrent from IRF4905S• Lead-Free


[{"Name":"Drain-Source Breakdown Voltage","Value":"- 55 V "},{"Name":"Continuous Drain Current","Value":"- 70 A "},{"Name":"Resistance Drain-Source RDS (on)","Value":"20 mOhms "},{"Name":"Configuration","Value":"Single "},{"Name":"Maximum Operating Temperature","Value":"+ 150 C "},{"Name":"Forward Transconductance gFS (Max / Min)","Value":"19 S"},{"Name":"Gate Charge Qg","Value":"180 nC"},{"Name":"Power Dissipation","Value":"170 W "},{"Name":"","Value":""},{"Name":"","Value":""}]

Manufacturer information

Warm Hint

What HQEW.NET can offer here?
1. www.hqew.net/product-data provides numerous and various electronic part data-sheet and technology document here., if it can't be shown, Please feel free to ask us for it.
2. www.hqew.net/news provides the latest information of the semiconductor industry or the electronics industry for you.
3. www.hqew.net provides verified suppliers and numerous electronic components for your demand and business.
Any questions you can contact us by email cs@hqew.net.
Request for Datasheet

  • Part No     :
  • Your Email:
  • Content     :

related datasheet
Browse Alphabetically: A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 0 1 2 3 4 5 6 7 8 9
Contact Us


One to One Customer Service