HomedatasheetIRF530L

IRF530L Datasheet

Transistors
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Description

Third generation Power( IRF530L ) MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. IRF530L Features • Dynamic dV/dt Rating• Repetitive Avalanche Rated• 175 °C Operating Temperature• Fast Switching• Ease of Paralleling• Simple Drive Requirements
Features

Parameters

[{"Name":"Drain to Source Voltage (Vdss)","Value":"100V"},{"Name":"Current - Continuous Drain (Id) @ 25° C","Value":"14A (Tc)"},{"Name":"Rds On (Max) @ Id, Vgs","Value":"160 mOhm @ 8.4A, 10V"},{"Name":"Vgs(th) (Max) @ Id","Value":"4V @ 250μA"},{"Name":"Gate Charge (Qg) @ Vgs","Value":"26nC @ 10V"},{"Name":"Input Capacitance (Ciss) @ Vds","Value":"670pF @ 25V"},{"Name":"Power - Max","Value":"3.7W"},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""}]

Manufacturer information

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