IRF540N product image


33A, 100V, 0.040 Ohm, N-Channel Power MOSFET
International Rectifier
INTERSIL [Intersil Corporation]


The IRF540N is a HEXFET power MOSFET. The IRF540N advanced HEXFET power MOSFET from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of the IRF540N, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.


IRF540N Features


• Advanced Process Technology

• Ultra Low On-Resistance

• Dynamic dv/dt Rating

• 175°C Operating Temperature

• Fast Switching

• Fully Avalanche Rated

Maximum Drain to Source Voltage VDSS100 V
Maximum Drain to Gate Voltage (RGS = 20kΩ) VDGR100 V
Maximum Gate to Source Voltage VGS±20 V
Maximum Drain Current Continuous (TC= 25oC, VGS = 10V) ID33 A
Maximum Drain Current Continuous (TC= 100oC, VGS = 10V) ID23 A
Maximum Power Dissipation PD120 W
Maximum Derate Above 25℃0.80 W/℃
Maximum Operating and Storage Temperature TJ, TSTG-55 to 175 ℃
IRF540N Replacement Parts
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