Manufacturer
Description
These P-channel HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistanceper silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dual TSOP-6 package is ideal for applications where printed circuit board space is at a premium and where maximum functionality is required. With two die per package, the IRF5810TR can provide the functionality of two SOT-23 packages in a smaller footprint. Its unique thermal design and RDS(on) reduction enables an increase in current-handling capability. IRF5810TR Features • Ultra Low On-Resistance• Dual P-Channel MOSFET• Surface Mount• Available in Tape & Reel• Low Gate Charge• Lead-Free• Halogen-Free
Features
Parameters
[{"Name":"Drain-Source Breakdown Voltage:","Value":"- 20 V"},{"Name":"Gate-Source Breakdown Voltage:","Value":"12 V"},{"Name":"Continuous Drain Current:","Value":"- 2.9 A"},{"Name":" Gate Charge Qg:","Value":"6.4 nC"},{"Name":"Power Dissipation:","Value":"0.96 W"},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""}]
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