IRF7309TRPBF Datasheet



The IRF7309TRPBF Specifically designed for Automotive applications, these HEXFET® Power MOSFETs in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. IRF7309TRPBF Features • Advanced Process Technology• Ultra Low On-Resistance• Dual N and P Channel MOSFET• Surface Mount• Available in Tape & Reel• 150°C Operating Temperature• Automotive [Q101] Qualified• Lead-Free


[{"Name":"Transistor Polarity","Value":"N and P-Channel "},{"Name":"Drain-Source Breakdown Voltage","Value":"30 V "},{"Name":"Gate-Source Breakdown Voltage","Value":"20 V "},{"Name":"Continuous Drain Current","Value":"4 A "},{"Name":"Drain-Source On Resistance","Value":"80 mOhms"},{"Name":"Mounting Style","Value":"SMD/SMT "},{"Name":"Package / Case","Value":"SOIC-8 "},{"Name":"Packaging","Value":"Reel "}]

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