IRF7402TRPBF product image


International Rectifierr


The IRF7402TRPBF  is Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.


IRF7402TRPBF Features


• Generation V Technology
• Ultra Low On-Resistance
• N-Channel MOSFET
• Very Small SOIC Package
• Low Profile (<1.1mm)
• Available in Tape & Reel
• Fast Switching

Transistor PolarityN-Channel
Drain-Source Breakdown Voltage20 V
Gate-Source Breakdown Voltage12 V
Continuous Drain Current6.8 A
Resistance Drain-Source RDS (on)35 mOhms
Mounting StyleSMD/SMT
Package / CaseSOIC-8
Gate Charge Qg14 nC
Power Dissipation2.5 W
IRF7402TRPBF Price
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