HomedatasheetIRF820

IRF820 Datasheet

Power Field Effect Transistor
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Description

Power Field Effect Transistor
N-Channel Enhancement-Mode Silicon Gate TMOS

TMOS POWER FETs 2 and 2.5 AMPERES rDS(on) = 3 OHM 450 and 500 VOLTS
rDS(on) = 4 OHM 450 VOLTS

Features

Parameters

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Manufacturer information

MOTOROLA => FREESCALE
Warm Hint

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