HomedatasheetIRF9510

IRF9510 Datasheet

3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET
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Description

This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Features
• 3.0A, 100V
• rDS(ON) = 1.200Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance

Features

Parameters

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Manufacturer information

INTERSIL

Intersil Corporation is a market leader in power management and precision analog technology for many of the most rigorous applications in the computing, consumer, and industrial markets. The company supplies a full range of power IC solutions including battery management, computing power, display power, regulators and controllers, and power modules; as well as precision analog components such as amplifiers and buffers, proximity and light sensors, data converters, timing products, optoelectronics and interface products. As a major supplier to the military and aerospace industries, Intersil’s product development methodologies reflect experience designing products to meet the highest standards for reliability and performance in challenging environments.


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