IRFB4020PBF Datasheet



This Digital Audio MOSFET( IRFB4020PBF ) is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for ClassD audio amplifier applications. IRFB4020PBF Features • Key parameters optimized for Class-D audio amplifier applications• Low RDSON for improved efficiency• Low QG and QSW for better THD and improved efficiency• Low QRR for better THD and lower EMI• 175°C operating junction temperature for ruggedness• Can deliver up to 300W per channel into 8Ωload in half-bridge configuration amplifier


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