HomedatasheetIRFBE30S

IRFBE30S Datasheet

Transistors
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Description

Third generation( IRFBE30S ) Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. IRFBE30S Features • Halogen-free According to IEC 61249-2-21Definition• Dynamic dV/dt Rating• Repetitive Avalanche Rated• Fast Switching• Ease of Paralleling• Simple Drive Requirements• Compliant to RoHS Directive 2002/95/EC
Features

Parameters

[{"Name":"Drain-Source Breakdown Voltage:","Value":"800 V"},{"Name":"Gate-Source Breakdown Voltage:","Value":"+/- 20 V"},{"Name":" Continuous Drain Current:","Value":"4.1 A"},{"Name":"Drain-Source On Resistance:","Value":"3 Ohms"},{"Name":"Maximum Operating Temperature:","Value":"+ 150 C"},{"Name":"Minimum Operating Temperature:","Value":"- 55 C"},{"Name":"Power Dissipation:","Value":"125 W"},{"Name":"Rise Time:","Value":"33 ns"},{"Name":"Fall Time:","Value":"30 ns"},{"Name":"Typical Turn-Off Delay Time:","Value":"82 ns"}]

Manufacturer information

SEME-LAB [SEME LAB]
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