IRFP250N

Power MOSFET

Manufacturer

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The IRFP250N TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.

IRFP250N Features

• Advanced Process Technology

• Dynamic dv/dt Rating

•175°C Operating Temperature

•Fast Switching

• Fully Avalanche Rated

•Ease of Paralleling

•Simple Drive Requirements

Parametrics

Maximum Continuous Drain Current, （VGS @ 10V TC@ 25°C）ID	30 A
Maximum Continuous Drain Current, （VGS @ 10V TC@ 25°C）ID	200 V
Maximum Continuous Drain Current, （VGS @ 10V TC@ 100°C）ID	21 A
Maximum IDM Pulsed Drain Current	120 A
Maximum TC @ 25°C Power Dissipation PD	214 W
Maximum Linear Derating Factor	1.4 W/°C
Maximum Gate-to-Source Voltage VGS	± 20 V
Maximum Single Pulse Avalanche Energy EAS	315 mJ
Avalanche Current IAR	30 A
Maximum Repetitive Avalanche Energy EAR	21 mJ
Peak Diode Recovery dv/dt dv/dt	8.6 V/ns
Operating Junction and Storage Temperature Range TJ TSTG	-55 to +175°C
Soldering Temperature, for 10 seconds	300 (1.6mm from case ) °C