IRFP260 product image


International Rectifier
VISHAY [Vishay Siliconix]
IXYS Corporation


Third generation Power MOSFET IRFP260 from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mouting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.


IRFP260 Features


• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Isolated Central Mounting Hole

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

Maximum Drain-Source Voltage VDS200 V
Maximum Gate-Source Voltage VGS± 20 V
Maximum Continuous Drain Current VGS at 10 V TC = 25 °C ID46 A
Maximum Continuous Drain Current VGS at 10 V TC = 100 °C ID29 A
Maximum Pulsed Drain Current IDM180 A
Maximum Linear Derating Factor2.2 W/°C
Maximum Single Pulse Avalanche Energy EAS1000 mJ
Maximum Repetitive Avalanche Current IAR46 A
Maximum Repetitive Avalanche Energy EAR28 mJ
Maximum Power Dissipation TC = 25 °C PD280 W
Maximum Peak Diode Recovery dV/dt5.0 V/ns
Maximum Operating Junction and Storage Temperature Range TJ, Tstg- 55 to + 150 °C
Maximum Soldering Recommendations (Peak Temperature) for 10 s300 °C
IRFP260 Replacement Parts
IRFP260 Price
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