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14A, 500V, 0.400 Ohm, N-Channel Power MOSFET
VISHAY [Vishay Siliconix]
INTERSIL [Intersil Corporation]
International Rectifier
IXYS Corporation

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.




  • • 14A, 500V
  • • rDS(ON) = 0.400W
  • • Single Pulse Avalanche Energy Rated
  • • SOA is Power Dissipation Limited
  • • Nanosecond Switching Speeds
  • • Linear Transfer Characteristics
  • • High Input Impedance
  • • Related Literature

            - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards


Drain to Source Voltage VDS500 V
Drain to Gate Voltage (RGS = 20k???VDGR500 V
Continuous Drain Current(TC = 25°C)ID14 A
Continuous Drain Current(TC = 25°C)ID8.8 A
Pulsed Drain Current IDM56 A
Gate to Source Voltage VGS±20 V
Maximum Power Dissipation PD180 W
Linear Derating Factor1.44 W/oC
Single Pulse Avalanche Energy Rating EAS860 mJ
Operating and Storage Temperature TJ, TSTG-55 to 150 oC
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