IRFP450LCPBF product image


FETs - Single
International Rectifier


The  IRFP450LCPBF  series of low charge Power MOSFETs achievesignificantly lower gate charge over conventional MOSFETs.Utilizing advanced Power MOSFET technology the deviceimprovements allow for reduced gate drive requirements,faster switching speeds and increased total system savings.These device improvements combined with the provenruggedness and reliability of Power MOSFETs offer thedesigner a new standard in power transistors for switchingapplications.The TO-247 package is preferred for commercial-industrialapplications where higher power levels preclude the use ofTO-220 devices. The TO-247 is similar but superior to theearlier TO-218 package because of its isolated mountinghole.


IRFP450LCPBF Features


• Ultra Low Gate Charge
• Reduced Gate Drive Requirement
• Enhanced 30 V VGS Rating
• Reduced Ciss, Coss, Crss
• Isolated Central Mounting Hole
• Dynamic dV/dt Rated
• Repetitive Avalanche Rated
• Lead (Pb)-free Available

Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C14A
Rds On (Max) @ Id, Vgs400 mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id4V @ 250μA
Gate Charge (Qg) @ Vgs74nC @ 10V
Input Capacitance (Ciss) @ Vds2200pF @ 25V
Power - Max190W
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