IRFZ44Z Datasheet



This HEXFET® Power MOSFET( IRFZ44Z ) utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. IRFZ44Z Features • Advanced Process Technology• Ultra Low On-Resistance• Dynamic dv/dt Rating• 175°C Operating Temperature• Repetitive Avalanche Allowed up to Tjmax• Lead-Free


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