HomedatasheetIRFZ44Z

IRFZ44Z Datasheet

Transistors
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Description

This HEXFET® Power MOSFET( IRFZ44Z ) utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. IRFZ44Z Features • Advanced Process Technology• Ultra Low On-Resistance• Dynamic dv/dt Rating• 175°C Operating Temperature• Repetitive Avalanche Allowed up to Tjmax• Lead-Free
Features

Parameters

[{"Name":"Drain-Source Breakdown Voltage:","Value":"55 V"},{"Name":" Continuous Drain Current:","Value":"51 A"},{"Name":" Drain-Source On Resistance:","Value":"13.9 mOhms"},{"Name":"Maximum Operating Temperature:","Value":"+ 175 C"},{"Name":" Power Dissipation:","Value":"80 W"},{"Name":"Rise Time:","Value":"68 ns"},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""}]

Manufacturer information

SEIKO INSTRUMENTS
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