HomedatasheetIRGP4063DPBF

IRGP4063DPBF Datasheet

Transistors
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Description

The IRGP4063DPBF is high Efficiency in a wide range of applications, suitable for a wide range of switching frequencies due toLow VCE (ON) and Low Switching losses, rugged transient Performance for increased reliability, excellent Current sharing in parallel operation IRGP4063DPBF Features • Low VCE (ON) Trench IGBT Technology• Low switching losses• Maximum Junction temperature 175 °C• 5 μS short circuit SOA• Square RBSOA• 100% of the parts tested for 4X rated current (ILM)• Positive VCE (ON) Temperature co-efficient• Ultra fast soft Recovery Co-Pak Diode• Tight parameter distribution• Lead Free Package
Features

Parameters

[{"Name":"Collector- Emitter Voltage VCEO Max:","Value":"600 V "},{"Name":"Collector-Emitter Saturation Voltage:","Value":"2.14 V"},{"Name":"Maximum Gate Emitter Voltage:","Value":"+/- 20 V"},{"Name":" Continuous Collector Current at 25 C:","Value":"96 A"},{"Name":"Power Dissipation:","Value":"330 W"},{"Name":"Minimum Operating Temperature:","Value":"- 55 C"},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""}]

Manufacturer information

FAIRCHILD SEMICONDUCTOR
Warm Hint

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