IRLR024TRPBF product image

IRLR024TRPBF

Transistors
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Manufacturer
Vishay
Description
 
Third generation power MOSFETs(IRLR024TRPBF ) from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRLU, SiHLU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.
 
IRLR024TRPBF Features
 
• Dynamic dV/dt Rating
• Surface Mount (IRLR024, SiHLR024)
• Straight Lead (IRLU024, SiHLU024)
• Available in Tape and Reel
• Logic-Level Gate Drive
• RDS(on)Specified at VGS= 4 V and 5 V
• Fast Switching

 

Parametrics
Drain-Source Breakdown Voltage:60 V
Gate-Source Breakdown Voltage:+/- 10 V
Continuous Drain Current:14 A
Drain-Source On Resistance:100 mOhms
Maximum Operating Temperature:+ 150 C
Minimum Operating Temperature:- 55 C
Power Dissipation:2.5 W
Rise Time:110 ns
Typical Turn-Off Delay Time:23 ns
Fall Time:41 ns
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IRLR024TRPBF
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