HomedatasheetIRLR120NPBF

IRLR120NPBF Datasheet

MOSFET
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Description

The IRLR120NPBF Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. IRLR120NPBF Features • Surface Mount (IRLR120N)• Straight Lead (IRLU120N)• Advanced Process Technology• Fast Switching• Fully Avalanche Rated• Lead-Free
Features

Parameters

[{"Name":"Transistor Polarity ","Value":"N-Channel"},{"Name":"Drain-Source Breakdown Voltage ","Value":"100 V "},{"Name":"Gate-Source Breakdown Voltage ","Value":"16 V "},{"Name":"Continuous Drain Current ","Value":"11 A "},{"Name":"Drain-Source On Resistance ","Value":"265 mOhms"},{"Name":"Configuration","Value":"Single "},{"Name":"Maximum Operating Temperature ","Value":"+ 175 C"},{"Name":"Mounting Style","Value":"SMD/SMT"},{"Name":"Package / Case","Value":"DPAK"},{"Name":"Packaging","Value":"Tube"}]

Manufacturer information

SIEMENS [SIEMENS SEMICONDUCTOR GROUP]
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