IXBH5N160G Datasheet



IGBT Transistors( IXBH5N160G ) 5 Amps 1600V IXBH5N160G Features • High Voltage BIMOSFETTM- substitute for high voltage MOSFETs with significantly lower voltage drop- MOSFET compatible control 10 V turn on gate voltage- fast switching for high frequency operation- reverse conduction capability• industry standard package- TO-220AB- TO-247AD epoxy meets UL94V-0 IXBH5N160G Applications • switched mode power supplies• DC-DC converters• resonant converters• lamp ballasts• laser generators, x ray generators


[{"Name":" Collector- Emitter Voltage VCEO Max:","Value":"1600 V"},{"Name":" Collector-Emitter Saturation Voltage:","Value":"4.9 V"},{"Name":"Maximum Gate Emitter Voltage:","Value":"20 V"},{"Name":"Maximum Operating Temperature:","Value":"+ 150 C"},{"Name":"Continuous Collector Current Ic Max:","Value":"5.7 A"},{"Name":"Minimum Operating Temperature:","Value":"- 55 C"},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""}]

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