NDS351AN product image


FAIRCHILD Semiconductor


These NDS351AN  N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.These devices are particularly suited for low voltage applications in notebook computers, portable phones,PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.


NDS351AN Features


•  1.4 A, 30 V. RDS(ON) = 160 mW @ VGS = 10 V
   RDS(ON) = 250 mW @ VGS = 4.5 V
•  Ultra-Low gate charge
•  Industry standard outline SOT-23 surface mount
   package using proprietary SuperSOTTM-3 design for
   superior thermal and electrical capabilities
•  High performance trench technology for extremely low RDS(ON)

Transistor PolarityN-Channel
Drain-Source Breakdown Voltage30 V
Gate-Source Breakdown Voltage+/- 20 V
Continuous Drain Current1.4 A
Drain-Source On Resistance92 mOhms
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Package / CaseSuperSOT
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